features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions dcr3030v42 dcr3030v40 dcr3030v35 dcr3030v30 4200 4000 3500 3000 t vj = -40c to 125c, i drm = i rrm = 200ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr3030v42 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 4200v i t(av) 3030a i tsm 40600a dv/dt* 1500v/s di/dt 400a/s * higher dv/dt selections available outline type code: v (see package details for further information) fig. 1 package outline dcr3030v42 phase control thyristor
current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 3030 a i t(rms) rms value - 4760 a i t cont inuous (direct) on - state current - 4550 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 40.6 ka i 2 t i 2 t for fusing v r = 0 8.24 m a 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.00746 c/w single side cooled anode dc - 0.0130 c/w cathode dc - 0.0178 c/w r th(c - h) thermal resistance C case to heatsink clamping force 54kn double side - 0.002 c/w (with mounting compound) single side - 0.004 c/w t vj virtual junction temperature (blocking) - 125 c t stg stora ge temperature range - 55 125 c f m clamping force 48.0 59.0 kn dcr3030v42 phase control thyristor
dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 200 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 1500 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 200 a/s gate source 30v, 10 ? , non - repetitive - 400 a/ s t r < 0.5s, t j = 125c v t(to) threshold voltage low level 200a to 1700a at t case = 125c - 0.82 v threshold voltage high level 1700a to 7000a at t case = 125c - 0.98 v r t on - state slope resistance low level 200a to 1700a at t case = 125c - 0.292 m ? on - state slope resistance high level 1700a to 7000a at t case = 125c - 0.198 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? tbd tbd s t r = 0.5s, t j = 25c t q turn - off time t j = 125c, v r = 200v, di/dt = 1a/ s, 250 500 s dv dr /dt = 20v/s linear q s stored charge t j = 125c, di/dt 1a/s, v r pk =3000v, v rm = 1700v 1600 3500 c i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma dcr3030v42 phase control thyristor
gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at v drm, t case = 125c tbd v i gt gate trig ger current v drm = 5v, t case = 25c 250 ma i gd gate non - trigger current v drm = 5v, t case = 25c tbd ma curves 0 1000 2000 3000 4000 5000 6000 7000 0.5 1.0 1.5 2.0 2.5 instantaneous on-state voltage v t - (v) instantaneous on-state current i t - (a) min 125c max 125c 25c max 25c fig.2 maximum & minimum on - state characteristics v tm equation where a = 0.866995 b = - 0.042053 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.000100 d = 0.014062 these values are valid for t j = 125c for i t 500a to 10000a dcr3030v42 phase control thyristor
0 2 4 6 8 10 12 14 16 0 1000 2000 3000 4000 5000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 mean on-state current, i t(av ) - (a) maximum case temperature, t case ( o c ) 180 120 90 60 30 fig.3 on-state power dissipation C sine wave fig.4 maximum permissible case temperature, double side cooled C sine wave 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 mean on-state current, i t(av) - (a) maximum heatsink temperature, t heatsink - ( o c) 180 120 90 60 30 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1000 2000 3000 4000 5000 6000 mean on-state current, i t(av) - (a) mean power dissipation - (kw) d.c. 180 120 90 60 30 fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on-state power dissipation C rectangular wave dcr3030v42 phase control thyristor
0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 2000 4000 6000 8000 mean on-state current, i t(av) - (a) maximum permissible case temperature , t case - (c) d.c. 180 120 90 60 30 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 6000 mean on-state current, i t(av ) - (a) maximum heatsik temperature t heatsink - ( o c) d.c. 180 120 90 60 30 fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave 0 2 4 6 8 10 12 14 16 18 20 0.001 0.01 0.1 1 10 100 time ( s ) thermal impedance , z th(j-c) - ( c/kw) double side cooling anode side cooling cathode sided cooling 1 2 3 4 double side cooled r i (c/kw) 0.9206 1.8299 3.4022 1.3044 t i (s) 0.0076807 0.0579454 0.4078613 1.2085 anode side cooled r i (c/kw) 0.9032 1.6719 3.0101 7.4269 t i (s) 0.0075871 0.0536531 0.3144537 5.624 cathode side cooled r i (c/kw) 0.9478 2.0661 1.6884 13.0847 t i (s) 0.0078442 0.0645541 0.3894389 4.1447 z th = 6 [r i x ( 1-exp. (t/t i ))] [1] ' r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ' z th (z) ' z th (z) ' z th (z) t sine. rect. t sine. rect. t sine. rect. 180 1.34 0.88 180 1.34 0.88 180 1.33 0.88 120 1.57 1.30 120 1.57 1.30 120 1.57 1.29 90 1.83 1.54 90 1.84 1.54 90 1.83 1.53 60 2.08 1.81 60 2.08 1.81 60 2.07 1.80 30 2.27 2.11 30 2.28 2.11 30 2.26 2.10 15 2.36 2.28 15 2.37 2.28 15 2.35 2.26 fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) dcr3030v42 phase control thyristor
fig.10 multi-cycle surge current fig.11 single-cycle surge current 0 2000 4000 6000 8000 10000 12000 14000 16000 18000 0 5 10 15 20 25 30 rate of decay of on-state current, di/dt - (a/us) stored charge, q s - (uc) q smax = 3397.4*(di/dt) 0.5061 q smin = 1357.3*(di/dt) 0.6271 conditions: tj = 125 o c v rpeak ~ 2500v v rm ~ 1700v snubber as appropriate to control reverse voltages. 0 100 200 300 400 500 600 0 5 10 15 20 25 30 rate of decay of on-state current, di/dt - (a/us) reverse recovery current, i rr - (a) i rrmax = 48.236*(di/dt) 0.7553 i rrmin = 29.853*(di/dt) 0.8222 conditions: tj=125 o c v rpeak ~ 2500v v rm ~ 1700v snubber as approriate to control reverse voltages fig. 12 stored charge fig. 13 reverse recovery current dcr3030v42 phase control thyristor
fig14 gate characteristics 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger current, i gt - (a) gate trigger voltage, v gt - (v) lower limit upper limit 5w 10w 20w 50w 100w 150w -40c fig. 15 gate characteristics 50 100 400 100 150 150 150 200 150 150 125 500 150 150 100 1000 150 100 25 10000 20 - - pulse width us frequency hz pulse power p gm (watts) dcr3030v42 phase control thyristor
package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. anode cathode nominal weight 1160g gate hole ?3.60 x 2.00 deep (in both electrodes) ?1.5 3rd angle projection if in doubt ask do not scale 20 offset (nom.) to gate tube ?110.0 max. ?73.0 nom. ?73.0 nom. for package height see table device maximum thickness (mm) minimum thickness (mm) DCR1474SV18 27.265 26.515 dcr1475sv28 27.34 26.59 dcr1476sv42 27.57 26.82 dcr1478sv48 27.69 26.94 dcr1574sv28 27.34 26.59 dcr1575sv42 27.57 26.82 dcr1576sv52 27.69 26.94 dcr4060v22 27.265 26.515 dcr3780v28 27.34 26.59 dcr3030v42 27.57 26.82 dcr2720v52 27.69 26.94 dcr2290v65 27.95 27.2 dcr1910v85 28.31 27.56 lead length: 420mm lead terminal connector: m4 ring package outline type code: v fig.16package outline dcr3030v42 phase control thyristor
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